Abstract
The electrooptic properties and the site occupancies of La ions in La-substituted Pb(Zr0.65,Ti0.35)O3 films, hereafter La-PZT films, were investigated. The La-PZT films with La-contents ranging from 0 to 12% were prepared on (111)Pt/Ti/SiO2/(100)Si substrates by Chemical solution deposition (CSD). The electrooptic property of the films was evaluated using a photospectroscope. Site occupation was determined by Raman spectroscopy. As a result, it is found that the resonant wavelength shift by applying DC bias voltage is maximum in the La-PZT film with a La content of 0%, not 8-9%, and La ions were also substituted for B-site at La-contents over 3% while La ions were selectively substituted only for A-site up to the La-content of 3% in our films.