Effects of A/B ratio and Mn addition on electrical properties of (K_0.47Na_0.47Sr_0.03)NbO₃ thin films

Abstract

(K_0.47Na_0.47Sr_0.03)NbO₃ system thin films were deposited by PLD on Si crystal substrates. The rf-sputtering layer of RuO₂ and SrRuO₃ layer formed by PLD were employed as the lower electrodes. (K_0.47Na_0.47Sr_0.03)_XNbO₃ bulk targets (X=0.9-1.05) with 0.5-5% Mn additive were prepared, and the effects of Mn addition and influences of A/B ratio on the electrical properties of the deposited films were studied. The depositional conditions for the crystalline film formation at lower temperature were also investigated.