Abstract
Ferroelectric Bi4Ti3O12 (BiT) has attracted much attention because of a large spontaneous polarization along the a axis. Defects such as oxygen vacancies and holes, however, impede polarization switching by electric field, leading to a poor polarization property. It was attempted to prepare BiT single crystals with few lattice defects. BiT single crystals were grown by a flux method under oxygen partial pressure of 10atm. The leakage properties and ferroelectric properties were investigated. In the poster presentation, we will discuss the dependence of the polarization properties of BiT crystals on the oxygen partial pressure of crystal growth.
