Abstract
FRAM or FeRAM has been in mass production for 15 years primarily in Japan. Yet many challenges remain regarding developing future FRAM devices which require lower voltages, smaller capacitor areas, thinner films, unlimited endurance to read/write cycling and a 10 year lifetime. In this presentation key material and testing challenges for ferroelectric capacitors will be reviewed and discussed. In conclusion, without further R&D on ferroelectric capacitors, FRAM will remain a niche market unable to complete with main stream non-volatile memories such as Flash or EEPROM.
