Fabrication of epitaxial oxide/metal hybrid systems by electron-beam induced process and hydrogen-reduction

Abstract

Aluminum oxide (Al2O3) has thermally and chemically stable property and is widely used as insulating ceramics materials. Recently, it has attracted much attention as insulating layers of Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), Tunnel Magneto-Resistance (TMR) devices and so on. Previously we reported low temperature epitaxial growth of Al2O3 films using the electron-beam induced process. This method allows us to control artificially the crystallinity of Al2O3 films. In this work, by using this electron-beam induced process and hydrogen-reduction technique, we attempted to fabricate epitaxial oxide/metal hybrid systems.