Diffusion phenomena in ZnO thin films with isotope hetero structures

Abstract

Isotope heterostructures of zinc oxide thin films were used to study diffusion characteristic by means of a secondary-ion mass spectrometry (SIMS). The films were deposited on a-plane sapphire substrates by pulsed laser deposition method. The isotopic depth profiles were fitted a simple solution with error functions that is applied the diffusion of internal layer. The diffusion coefficient was successfully obtained without an evaporation and surface reaction effect.