Electrical characteristics of ferroelectric gate transistor using ZnO and YMnO3

Abstract

Ferroelectric gate transistor is expected as next generation non-volatile memory. There are, however, several issues at the ferroelectric/semiconductor interface. The use of oxide channel should be the solution for the issues. In this paper, ferroelectric gate TET was fabricated using ZnO channel. Bottom gate TFT showed a relatively large ON current. Detailed studies on dielectric properties revealed that the ON current includes ferroelectric polarization together with some other space charge effect.