Contributions of Ga additive toward sintering properties and grain boundary conductivity on Y-doped BaZrO₃ proton conductor

Abstract

Ga and Y co-doped BaZrO3 perovskite type proton conductors were fabricated by solid state reaction method to reveal contributions of Ga additive toward sintering properties and grain boundary conductivity. A lattice parameter a showed dependence to Ga concentration. It showed maximum value at 1mol% Ga. That of 1mol% Ga and 14mol% Y doped BaZrO3 was 4.215Å which was close to that of 15mol% Y-doped BaZrO3 sintered at 1800oC. It decreased as increases of Ga concentration up to 5mol%.