Abstract
Thin-film heaters made of molybdenum silicide (MoSi2) were fabricated using RF magnetron sputtering and their heating characteristics under high vacuum were evaluated. Resistance value of the MoSi2-thin-film heater deposited on a Si3N4 substrate increased with increasing heating time. It is speculated that this deterioration is due to the formation of MoO3 in a thin film.