Abstract
Zinc (Zn)-doped amorphous carbon (a-C:H) films have been fabricated from zinc acetylacetonate by organometallic chemical vapor deposition (CVD). Zinc acetylacetonate was vaporized by heating, and the vaporized organometallic complex was carried to reaction chamber by argon gases. Zn concentration in the films was controlled by methane flow rate introduced to the reaction chamber. Deposited films were Zn doped hydrogenated oxygenated amorphous carbon films because they consisted of carbon, hydrogen, zinc and oxide. The maximum concentration ratio of zinc to carbon (Zn/C) was as large as 0.069. This Zn concentration depended on methane flow rate. Depletion of the film resistivity: R was found when Zn concentration Zn/C increased. These results show that organometallic CVD using a solid organometallic complex is a promising method of fabricating metal-doped a-C:H films.
