Numerical and experimental approach of crystal growth of semiconductor

Abstract

Our society needs semiconductor crystals in the fields of information, environment and energy. Silicon crystals are used for photo voltaic and large scale integrated circuits (LSIs) in the fields of energy and information, respectively. Concerning compound semiconductors, GaAs and InP are utilized in the field of information, and nitrides are for optical area. This paper focuses on melt growth, physical vapor transport and liquid phase epitaxy from the point of views of both numerical and experimental approach.