Abstract
The simple approach with inexpensive production to synthesis SiC nanowires via Si ingot vapor-CH4 gas system was performed in mullite tube furnace. The Si ingot was ground which was then sieved with a sieve No. 200 mesh (74 um) before used as precursor. The as-grown product was obtained in mullite boat after reaction at 1350oC for 1 h. Characterization by a X-ray diffractometer, a field-emission scanning electron microscope and a transmission electron microscopy can confirmed that the product was SiC nanowires with typical diameter distributed in the range from 20-80 nm. The length of typical synthesized SiC nanowires were several hundreds of micrometers.
