Abstract
Dense yttrium oxide films were prepared by aerosol deposition process for semiconductor industry. The films could be formed on various substrates such as aluminum alloy, alumina, and quartz at room temperature. The film had an excellent plasma resistance compared with Y2O3 sintered bulk and Y2O3 spraying because of its fine structure and high density. According to SEM observation, the microstructure of the film did not change even after plasma exposure. A usable coating area is 600mm X 600mm by stabilization of the aerosol beam and optimization of the deposition conditions. Broad application is expected in plasma-etching machinery.
