Abstract
Simple thermal evaporation of Si powder in CH4 gas during heating up at 1623K was applied to fabricate SiC/SiO2 core-shell nanowires. Two different average particle sizes of Si powders, 50 nm and 5 um, were used as precursors. Oxidized larged-size Si powder was also use as raw powder to confirm the effect of surface oxygen of Si raw materials on core-shell nanowires formation. The products were proved as bi-phase nanowires, core was b-SiC while outer shell was SiO2 of low crystallinity. The typical synthesized nanowires have diameter of not more than 100 nm with several tens micrometer in length
