Preparation of atomically flat substrate for PbTiO3 nano crystal growth

Abstract

Preparation of PbTiO3 nano-crystals have been interesting as investigation of ferroelectric size effect, high quality ultra thin film growth and nano-scale storage media. In this study, formation of atomically flat surface of various sapphire substrates was investigated. The atomically flat surface with step-terrace structure on sapphire (001) and (012) substrates was obtained by annealing above 1000oC and 3min, however step bunching was occurred on (001) substrate above 1100oC. In the case of (110) substrates, atomically flat was obtained, however, step edge formed a zigzag line, and 2D controlled surface can be obtained. Pt layer for bottom electrode was also prepared on sapphire, and lateral growth Pt layer was obtained.