Abstract
We investigated the conditions for the syntheses of BaSi6ON8 and Ba4-xCaxSi6ON10 through the solid-state reaction. The BaSi6ON8 was prepared by the solid-state reaction of BaCO3 and Si3N4 with the molar ratio of (Si/(Ba+RE))=6.0; RE= Eu or Ce) at a temperature between 1650 and 1800 deg C for 2 h. On the other hand, Ba4-xCaxSi6ON10 was obtained when the mixture of starting materials, i.e., BaNx, Ca3N2, SiO2 and Si3N4 with x value of 2.2 was heated at a temperature 1450 deg C for 2 h in N2-H2 (N290%-H210%) atmosphere. The excitation and emission wavelengths of 2 mol% Eu2+-doped BaSi6ON8 were 370 and 508 nm, respectively, whereas for 3 mol%Eu2+-doped Ba4-xCaxSi6ON10 were found to be 530 and 648 nm, respectively.