Abstract
Mg2X (X=Si, Ge, and Sn) and their solid solutions have been considered as candidates for high-performance thermoelectric materials. We have fabricated oxidation-resistant FeSi2 films on sintered Mg2X by RF magnetron sputtering in order to improve the oxidation resistance of Mg2X. The sputtering condition was investigated in detail to optimize the thickness of FeSi2 thin film. The thermoelectric Mg2X materials coated by FeSi2 thin film show good oxidation resistance.