Abstract
Thermoelectric, TE, of thin-film and thick-film accelerate the development of various new TE microdevices. In this study, TE thin films have been deposited by sputtering and their TE properties measured at high temperature. The TE measurement for various thin film TE materials including Si, SiGe, Al doped ZnO, InO-ZnO, Nb doped SrTiO3 thin films have been studied.