Nitrogen ionic diffusivity in nitrogen-isotopic AlN multilayers

Abstract

Nitrogen-isotopic heterostructural thin films were deposited by means of a molecular beam epitaxy method. Two radical nitrogen guns were used as sources of nitrogen isotope. The nitrogen isotope abundances were analyzed with a secondary ion mass spectrometry. The thin films were diffusion annealed in nitrogen gas or vacuum. The level of nitrogen diffusivity was two orders of magnitude less than oxygen diffusivity in alumina.