Abstract
(Lax,Sr1-x)CrO3 (LSC) has been eagerly anticipated for use in SOFC interconnect-applications. However it is difficult to fabricate LSC bulk ceramics by sintering technique because of its high sintering temperature over 1873 K. Compared with deposition rate of the LSC film using the normal AD technique, deposition rate of the film using the plasma assisted AD technique was increased up to 5 times. Compared with Vickers hardness of the LSC film using the normal AD technique, the hardness of the film using the plasma assisted AD technique was increased up to 3 times.