Fabrication of (Bi,Pr)(Fe,Mn)O3/B-doped diamond layered structure and their high temperature operations

Abstract

(Bi,Pr)(Fe,Mn)O3 (BPFM)/B-doped diamond layered structure was fabricated on a (111) diamond substrate. B-doped diamond films were homoepitaxially grown on (111) diamond substrate using MPCVD. Then, BPFM thin films were deposited on the B-doped diamond layer by PLD. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated layered structure showed saturated P-E hysteresis curves with 2Pr: 90C/cm2 and 2Ec: 740kV/cm for maximum electric field of 900kV/cm at room temperature. P-E hysteresis curves without influences of leakage current were observed even when the measurement temperature was increased to 170 ˚C.