Abstract
CNT-dispersed Si3N4 ceramics was fabricated by adding HfO2 as sintering aids. As a result, the sample by adding HfO2 fired at lower temperatures showed higher bending strength and higher electrical conductivity because HfO2 promoted the densification of Si3N4 and prevented CNT from disappearance. CNT-dispersed Si3N4 ceramics by adding HfO2 added indicated higher bending strength and higher electrical conductivity than those by adding TiO2.