Grain growth control of CSD-derived BaTiO3 thin films by seed layers

Abstract

BaTiO3 thin films were synthesized by a CSD method on (111)-oriented Pt/Al2O3 and Si substrates at 800 °C. The insertion of seed layers between BaTiO3 and Pt electrode enhanced the grain growth, and as a result the shape of BaTiO3 grains changed from small granular to large columnar one with increasing dielectric constant of the film. The growth orientation of BaTiO3 grains was strongly affected by the seed layers.