Abstract
Electrically conductive CNT-dispersed Si3N4 ceramics with high strength were fabricated by varying the CNT quantity and the firing temperature. By TEM observation, CNTs were found to exist in the grain boundary in the Si3N4 ceramics, and their diameter was found to be almost the same as that of raw CNTs. The electrical conductivities of the samples increased with an increase in the firing temperature, which was explained by the grain growth of Si3N4. The bending strength of the samples with 1 wt% of CNTs was as high as that of samples without CNTs. Thus, CNT-dispersed Si3N4 ceramics having both electrical conductivity and a higher bending strength were obtained by controlling the CNT quantity and the firing temperature.