Abstract
The thermoelectric properties of impurity-doped Mg2Si composites fabricated using the reduction method of metal oxide / carbonate / hydroxide additives (Al2O3, Bi2O3, Sb2O3, La(OH)3, Li2CO3, Ag2O, CuO, Ga2O3, In2O3, Na2CO3, and Y2O3) have been characterized. The maximum values of ZT for impurity-doped Mg2Si composites fabricated using the reduction method of Al2O3, Sb2O3, Bi2O3, and La(OH)3 additives show 0.58 at 862 K, 0.68 at 864 K, 0.63 at 863 K, and 0.06 at 865 K, respectively.