Abstract
To prepare the high permittivity thick dielectric films with barium titanate (BaTiO3), barium stannate (BaSnO3) was added for curie temperature shift to room temperature. At room temperature the dielectric constant of BaSnO3-doped and –undoped samples were 6500 and 52000, respectively. EL devices also fabricated with BaSnO3 doped thick dielectric films. Both EL luminance and luminous efficacy improved approximately three times.