Effect of residual stress and oxygen deficiency on metal-insulator phase transition of La_1-xSr_xMnO_3-d thin films for smart radiation device

Abstract

La_1-xSr_xMnO_3-d (LSMO) thin films were developed as a smart radiation devices (SRD) for the future thermal system in satellites. LSMO films were deposited on several kinds of substrates and annealed in the ambient atmosphere. The metal-insulator transition temperatures were determined from magnetization curves and the emissivity of each LSMO film was measured by FT-IR as a function of ambient temperature. LSMO film with metal-insulator transition at room temperature showed the emissive change that was comparable with that of bulk LSMO during the transition. It was found that the amount of oxygen vacancies in LSMO films has more influence on the metal-insulator transition temperature than residual stress.