Abstract
Epitaxial (111) Zn ferrite (ZFO) film with 50 nm thick was deposited on (001)YSZ substrate using KrF eximer laser PLD (pulsed laser deposition) apparatus. 0.1-10mol% Ti doped Zn ferrite (ZFTO) homo-epitaxial thin films with (111) orientation were deposited on ZFO buffered YSZ substrate as ZFTO/ZFO/YSZ structure. ZFO film on YSZ (ZFO/YSZ) showed higher electrical resistivity then the ZFTO/YSZ film. The resistance of the homo-epitaxial ZFTO/ZFO/YSZ film decreased with increasing the NO2 gas concentration. There was a good relationship between sensitivity and NO2 concentration in case of ZFTO(8nm)/ZFO(20nm)/YSZ film.