Machining of GaN by Plasma CVM(Chemical Vaporization Machining) (3rd Report)

Abstract

In the plasma CVM process, we use the electrode which rotates vertical direction as an axis of rotation.
The removal rate at the under the electrode tip is smaller than the around. We consider that it is because of the little gas flow under the electrode tip.
In this report, we process the Si substrate making use of several electrodes that can absorb gases from the electrode tip.
As a result we obtain the increase of removal rate at the under the electrode tip by using the electrode that can absorb the gases.
And, it is possible to decrease the contamination by reaction products at the substrate surface.