Abstract
For investigating the basic mechanism of material processing, it is important to clarify how cracks propagate in a material. In this work, simulations of Mode I, II crack propagation have been carried out for Si using an analytical solution–controlled MD in which MD is controlled by the analytical displacement field around a crack. In the case of Mode I, it has been shown that shear slip lines develop from various parts of the crack surface, thereby creating voids along the slip lines occasionally. Also in the case of Mode II, a network of slip lines develops and in–stantaneous void generations occur in the network. From the two results of these simulations, it has been found that growth of slip lines and instantaneous void generations play a crucial role in fracture of silicon.
