Study on Polishing of Si wafer with Pyramidal Structured Polishing Pad

Abstract

In this study, the fundamental polishing characteristic in wet mechano–chemical polishing of Si wafer with KOH aqueous solution using a pyramidal structured polishing pad including 6 μm Al₂O₃ abrasives was investigated. A series of polishing tests has been carried out and reactants formed on finished surface have been analyzed by using an atomic force microscope. As a result, a formation mechanism of reactants in wet mechano–chemical polishing of Si wafer with KOH aqueous solution has been shown and an optimum concentration of KOH aqueous solution to create a smooth surface has been clarified.