Ion–Assisted Film Growth by dc Unbalanced Magnetron Sputtering

Abstract

Physical and chemical properties of sputtered films are strongly dependent on their deposition conditions. The purpose of this work is to clarify the effect of low energy ion irradiation on the metal film growth. Ti films were deposited onto glass substrates at various ion irradiation conditions using an unbalanced sputtering apparatus equipped with an external coil. The relationsihp between the ion flux during film growth and the film properties, such as internal stress, crystal structure and surface morphology, has been investigated.