Molecular dynamics simulation of silicon wafer grinding/polishing which simulated chemical action

Abstract

This study aims to clarify the interaction between Si wafer and individual abrasive grains in an atomic level. This paper reports on the proposal of the molecular dynamics simulation in Si wafer grinding/polishing with the control of the interatomic potential parameters to consider the chemo-mechanical and mechano-chemical effects between an abrasive and a Si wafer. Some comparisons between the diamond grinding and the chemo-mechanical polishing and mechano-chemical grinding were performed using the present model. As a result, it was clarified that the necessity of improvement in proposed chemo-mechanical polishing model and the availability in proposed mechano-chemical grinding model.