GaN(0001) surface structures dependence of their synthesizing condition

Abstract

We are developing surface cleaning method for GaN(0001) as received substrate to confirm the general preparation method of GaN clean surfaces and studying their atomic structures during cleaning process systematically. So far, we have confirmed the annealing condition in ultra high vacuum for clean surface. We found that different surface structures appeared even after the same annealing treatment at different synthesized samples. In the presentation, we will show each different surface structure and discussed the origin of the structures dependency.