Properties of oxide film CMP with fumed silica slurry

(Relationships between LPC and dispersion conditions of fumed silica)

Abstract

In the manufacturing process of LSI device, dielectric layer planarization process is important. To make its dielectrics a flat, CMP(Chemical Mechanical Polishing)machining with fumed silica slurry is used. In this CMP process, micro scratch defects caused by large particles in slurries are big problem. So we investigate the effect of slurry dispersion condition on large particle counts(LPC) and micro scratch defects. And we try to reveal the generation mechanism of micro scratch. In this paper, we report the relationship between LPC and dispersion condition of fumed silica.