Impact of excitation frequency on high-pressure plasma solid source dry etching method

Abstract

We attempt to develop a dry etching method using a high-pressure plasma which enables us to treat a Si substrate efficiently without global warming PFC gas. From the viewpoint of process throughput, the feature of this dry etching method, which is possible to conduct under high pressure atmosphere, is very attractive. In this study, we have investigated an impact of the plasma excitation frequency on an etching behavior of this method.