The control of SiC crystal surface swelling around several nanometer on Ar ion-beam

Abstract

SiC crystal was irradiated by Ar beam at 90 and 700 kV with the fluence range from 1×10 to the power of 15 up to 2×10 to the power of 17 [ion/cm2] and the induced swelling height was measured. Irradiation effect and the range distribution were calculated by TRIM to evaluate the optimization of the experimental condition. As a result of experiment, a swelling structure was successfully processed on the SiC crystal surface. The swelling height could be controlled from 1nm up to 100nm with a precision of about 5nm.