Formation of graphene with low density of defects on SiC assisted by plasma oxidation

Structure and composition of SiO₂/SiC interface depending on oxidation processes

Abstract

The formation of defects such as pits on SiC is a serious concern in epitaxial growth of graphene. We have developed a process with plasma oxidation to form graphene with the low density of pits. In this scheme, a key is the formation of a carbon layer at the SiO₂/SiC interface during plasma oxidation at near room temperature. In this talk, we employ two different oxidation processes, which are plasma and thermal oxidation. Then we investigate chemical bonding of carbon species at the SiO₂/SiC interfaces after these oxidation. We discuss the impact of oxidation processes on the structure and the composition of the SiO₂/SiC interface.