Creation and observation of the atomically-ordered reconstructed surfaces on the three-dimensionally architected Si

Abstract

We have established the original methodology that enable to observe atomic orderings and arrangements of surfaces with arbitrary directions on three-dimensionally (3D) figured structures, by developing diffraction and microscopy techniques. An original technique, namely, the directly and quantitatively viewing of the side- and facet-surfaces in atomic scale using reflection high-energy electron diffraction (RHEED) and scanning tunneling microscope (STM), can feedback to the determination of process parameters in the etching procedure, and realize the atomically-ordered 3D surfaces. RHEED and STM prove atomically-reconstructed Si{100}2x1, {110}16x2, and {111}7x7 side- and facet-surfaces.