Deep Ultraviolet Raman study of subsurface damage on single crystalline diamond by Ga ion irradiation (4th report)

Oxygen concentration dependence of the etching of subsurface damaged layer by deep ultraviolet light irradiation

Abstract

An altered layer is formed on the surface of single crystal diamond by FIB processing. In this study, we focus on the process of structural change of the work-affected layer by deep ultraviolet irradiation using micro-Raman spectroscopy. Etching of the work-affected layer is observed by irradiating deep ultraviolet rays in an oxygen atmosphere. It has been clarified that the oxygen concentration affects the etching rate. In the presentation, we will discuss the process of structural change of the work-affected layer by deep ultraviolet irradiation and the surface structure after etching.