Abstract
A power MOSFET has been used as a reliable switching device in automotive electronics. The increasing applications of electronics system in the car requires a lower "ON-resistance", the resistance when the system is in use. Normally, reduction of On-resistance is achieved by miniaturizing the unit. ln this paper, however, On-resistance was minimized through the improvement of the drain electrode process. As a result, the drain contact- resistance was reduce by a factor of eight, showing the potential of miniaturizing the device increasing the functional capacity and reducing manufacturing cost. ln addition, the drain contact-resistance become less sensitive to atmospheric temperature test and thermal cycles. The technology developed in this study can be applied to a wide range of similar devices.
