Abstract
The thermal oxidation of silicon is a basic process in micro-sensor fabrication. In this study, Quality Engineering(Taguchi-Methods)was applied to improve the uniformity and controllability of SiO2 thickness. Two Zero-point Proportional equations were used for analyses : (1)Y=βM (Y:SiO2 thickness, β : constant, M : oxidation time) (2)Y*=βM (Y*:square of SiO2 thickness) As a result, excellent uniformity of SiO2 thickness was obtained under the optimum condition when generic function(2)Y*=βM was used.
