Study on Electronic State Analysis of SnO₂ Transparent Electrode and on Making Low Resistance with First-Principles Calculation

Abstract

SnO₂ has been promised as a substitutional transparent film for ITO. In order to decrease the resistance of sputtered SnO₂ electrode, effect of crystallinity on carrier mobility was investigated for the sputtered SnO₂ films. In this research, electronic structure (especially band structure and charge density) of SnO₂ with first-principles calculation on quantum theory was clarified. Thereby, the validity of doping and crystallinity in (110) to making low resistance was founded. Besides, application of the seed layer of CVD SnO₂ thin film with high crystallinity lowered the resistance of SnO₂ of sputtered film.