QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY
Print ISSN : 0288-4771
Structure and Strength of SiC/Ti Bonding Interface
Masaaki NakaJicai FengJulius C. Schuster
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1996 Volume 14 Issue 2 Pages 338-343

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Abstract

The solid state bonding of pressureless-sintered SiC to SiC using 20 μm Ti foil was conducted at bonding temperatures ranging form 1373 to 1673 K for 0.3 to 72 ks in vacuum. For a constant bonding time of 3.6 ks, the granular TiC next to Ti and a mixture of Ti5Si3Cx+TiC phases next to SiC were formed. Increasing the bonding temperature in 100 K intervals from 1473 K to 1773 K, the Ti5Si3Cx single phase, Ti3SiC2 phase and TiSi2 phase sequentially appeared. Fracture shear testing was used to measure bonding strength. The bonding strength was found to increase up to a maximum of 153 MPa at 1473 K. At higher temperatures it decreases to 54 MPa at 1573 K. At still higher temperatures bonding strengh again increases. The highest strengh of 250 MPa was measured at 1773 K. This variation of bonding strength with bonding temperature will be correlated with the microstructure observed at the interfase of the joints. The SiC/Ti joint with a duplex phase of Ti3SiC2+TiSiz shows the stable strength up to testing temperature 973 K.

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