QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY
Print ISSN : 0288-4771
Formation of p-n Junction by Diffusion Bonding
Osamu OHASHITakayuki YOSHIOKAMasayasu HASHIMOTOTerutomo NAGAI
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2000 Volume 18 Issue 3 Pages 474-478

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Abstract

In order to make a p-n junction without epitaxial growth method, a diffusion bonding of p-type silicon single crystal to n-type one was tried. The effect of bonding conditions such as bonding temperature, surface treatment and misorientation angle at bonding interface on the electric characteristics of the joint was investigated. Joints were made using samples prepared with a (001) crystal plane at bonding surface. All the samples were joined in a vacuum and an air using radio frequency heating.
The electric device with a rectifying action was made by the diffusion bonding. The joints was formed above bonding temperature 800°C and the current voltage characteristics depended on the temperature, the thickness of oxide film and the misorientation angle at interface. The rectifying action deteriorated with an increase in the bonding temperature and the oxide film on bonded silicon crystal. The electric characteristics of the joints depended on the misorientation angle at bonding interface. It was found that low-angle boundaries and coincidence boundaries were better for the rectifying action than random high-angle boundaries.

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