2000 Volume 18 Issue 4 Pages 600-605
The reaction between Br resins and Au4AI intermetallic compound layer at the Au-Al bond interface has been observed when the semiconductor device is used at high temperatures. Au4AI is annealed at 573 K for 2 hours with Br resin encapsulation, and microstructures and chemical compositions of the corroded layer have been investigated with TEM and EDX. In the corrosion layer, black island-shape phase with fcc structure and white amorphous phase have been found out. The former one was considered to be Au phase and the latter one amorphous phase of Al-Br-O system. The hardness of the corrosion layer and the Au4AI are 98 Hv and 192 Hv, respectively. Therefore, it can be considered that the formation of the Au phase and the Al-Br-O amorphous phase contribute to the reduction of the mechanical property during the annealing.