Abstract
A reactive bniding method has been investigated to metalize SiC substrates with Cu foils. The bonding was carried out in argon atmosphere by using Cu-Mn liquid insert alloys.
Bonding strength was measured by peel test, and the bodning interface was analyzed with EPMA.
Cu-Mn insert alloys containing Mn more than 35wt% showed an excellent bondability by heating just above the melting point of insert fiols for a short time. Interfacial analysis revealed that SiC is decomposed by Cu-Mn liquid, and the decomppsed element of C remains at SiC/Cu-Mn interface, but Si dissolves into Cu-Mn liquid.
Cu bonded to SiC kept a high bonding strength in reheating treatment below 600°C, but decreased the strength above 600°C.
Thermal cycle test (-50°C-150°C) showed that no crack was observed in SiC substrates bonded with Cu foiis less than 30 μm in thickness even after 1000 cycles.
SiC surface from which Cu was removed by etching had almost same electric resistivity as original surface.
