The Journal of Reliability Engineering Association of Japan
Online ISSN : 2424-2543
Print ISSN : 0919-2697
ISSN-L : 0919-2697
Analysis of Field Test Results on the Stability of p-Si and c-Si Photovoltaic Modules Manufactured in the 1990's
Sadao SAKAMOTOToshimitsu OOSHIRO
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2003 Volume 25 Issue 6 Pages 571-581

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Abstract
The long-term stability of p-Si and c-Si photovoltaic modules manufactured in the 1990's has been studied. About 2,000 modules were investigated after nearly 10 years of exposure. About 150 modules out of these were evaluated by indoor I-V measurements. An average performance loss of less than 0.5%/year was estimated. We found three dominant degradation modes which are main problems for achieving 30-year life time; (1)visual defects caused by delamination between the cells and the potant and two modes without visual features. (2)One is accompanied by a decrease in the fill factor (FF), and (3)the other is accompanied by a decrease in both the short-circuit current (I_<SC>) and the open circuit voltage (V_<OC>). Destructive analyses of modules with degraded FF were conducted.
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© 2003 Reliability Engineering Association of Japan
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