Abstract
Nanowires have attracted much attention for many years because they are most attractive from the point of view of high sensitivity and surface-modifying for various sensors. Recently, silicon nanowires (SiNWs) are widely applied for biosensors. But the method of SiNW fabrication is hard to say suited to mass production because conventional top-down fabrication method needs nano-lithography processes. From these back grounds, we fabricated silicon nanowires from Silicon-on-Insulator (SOI) wafer with conventional only micro-fabrication processes and we showed that the resulting devices exhibited FET behavior after ion implantation allowing us to detect pH and a protein binding. But a few attempts were made so far to control their temperature although this parameter has been shown to be crucial when dealing with biochemical reactions. We also present the results of temperature control of silicon nanowires by using fluorescence thermometry. The resistive heating on nanowires was carried out with applying voltage potential of 6~12V in air condition, and the temperature at the central line along SiNWs increasing from 30 degrees to 35~70 degree was observed.
