Crystalline Structure of SiC Thin Films Grown by MOCVD Method with Tetraethylsilane

Shuichi ASAHINA; Naoki KUBO; Hiroshi TSUDA; Nobuyuki KANAYAMA; Akihiro MORITANI; Kuninori KITAHARA

doi:10.4139/sfj.54.372

Journal of The Surface Finishing Society of Japan

Online ISSN : 1884-3409
Print ISSN : 0915-1869
ISSN-L : 0915-1869

Notes

Crystalline Structure of SiC Thin Films Grown by MOCVD Method with Tetraethylsilane

Shuichi ASAHINA, Naoki KUBO, Hiroshi TSUDA, Nobuyuki KANAYAMA, Akihiro MORITANI, Kuninori KITAHARA

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Keywords: MOCVD, Silicon Carbide, Thin Film, Tetraethylsilane, Crystalline Structure

JOURNAL FREE ACCESS

2003 Volume 54 Issue 5 Pages 372-373

DOI https://doi.org/10.4139/sfj.54.372

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Abstract

It was proved that the crystalline SiC thin films were grown on silicon substrates by thermal CVD process using the liquid source, tetraethylsilane. The film was investigated by XRD and TEM methods. It was clarified that the film consisted of polycrystalline 3C-SiC and included stacking faults.

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